Title :
Study of microdefects in near-surface and interior of III-V compound wafers by dark-field transmission microscopy
Author :
Montgomery, P.C. ; Fillard, J.P.
Author_Institution :
Univ. des Sci. et Tech. du Languedec, Montpellier
fDate :
6/23/1988 12:00:00 AM
Abstract :
The application of dark field transmission microscopy is reported for observing microdefects in III-V compound wafers. Using near infra-red imaging with a video camera, high contrast results are obtained of micro-precipitates of 1 μm and smaller in the subsurface and interior of wafers of indium-doped GaAs and an epitaxial layer of GaAs on GaAs
Keywords :
III-V semiconductors; gallium arsenide; optical microscopy; precipitation; semiconductor technology; 0 to 1 micron; GaAs-GaAs; GaAs:In; III-V compound wafers; NIR imaging; dark-field transmission microscopy; epitaxial layer; high contrast; interior of wafers; micro-precipitates; near infra-red imaging; near-surface defects; observing microdefects; semiconductors; subsurface; video camera;
Journal_Title :
Electronics Letters
