DocumentCode
1321145
Title
The role of axially nonuniform carrier density in altering the TE-TE gain margin in InGaAsP-InP DFB lasers
Author
Ketelsen, Leonard J P ; Hoshino, Isako ; Ackerman, David A.
Author_Institution
AT&T Bell Lab., Murray Hill, NJ, USA
Volume
27
Issue
4
fYear
1991
fDate
4/1/1991 12:00:00 AM
Firstpage
957
Lastpage
964
Abstract
Axial nonuniformities in the carrier density profile of 1.55 μm capped-mesa-buried-heterostructure distributed-feedback (CMBH-DFB) InGaAsP-InP diode lasers are discussed. This is accomplished by directly measuring the spontaneous emission at various locations in the laser optical cavity. The authors observe that the highly asymmetric optical field, inherent in DFB lasers, produces a strong longitudinal nonuniformity in the carrier density. This promotes degradation of the lasing gain margin between the dominant TE Bragg modes, which is verified through measurements of the relative shift of the lasing mode in the stopband. The reduction of gain margin is shown to cause multimode operation in devices with large optical field asymmetries. In devices with modest optical field asymmetries, the reduction of the gain margin saturates, and single mode behavior is maintained. Measurements are consistent in many respects with the predicted consequences of spatial hole burning
Keywords
III-V semiconductors; carrier density; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor junction lasers; InGaAsP-InP; InGaAsP-InP DFB lasers; TE-TE gain margin; asymmetric optical field; axially nonuniform carrier density; capped-mesa-buried-heterostructure distributed-feedback; diode lasers; dominant TE Bragg modes; laser optical cavity; lasing gain margin degradation; lasing mode shifts; multimode operation; optical saturation; semiconductors; single mode; spatial hole burning; spontaneous emission; stopband; Charge carrier density; Degradation; Diode lasers; Gain measurement; Laser modes; Optical devices; Optical saturation; Spontaneous emission; Stimulated emission; Tellurium;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.83330
Filename
83330
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