Title :
The role of axially nonuniform carrier density in altering the TE-TE gain margin in InGaAsP-InP DFB lasers
Author :
Ketelsen, Leonard J P ; Hoshino, Isako ; Ackerman, David A.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
4/1/1991 12:00:00 AM
Abstract :
Axial nonuniformities in the carrier density profile of 1.55 μm capped-mesa-buried-heterostructure distributed-feedback (CMBH-DFB) InGaAsP-InP diode lasers are discussed. This is accomplished by directly measuring the spontaneous emission at various locations in the laser optical cavity. The authors observe that the highly asymmetric optical field, inherent in DFB lasers, produces a strong longitudinal nonuniformity in the carrier density. This promotes degradation of the lasing gain margin between the dominant TE Bragg modes, which is verified through measurements of the relative shift of the lasing mode in the stopband. The reduction of gain margin is shown to cause multimode operation in devices with large optical field asymmetries. In devices with modest optical field asymmetries, the reduction of the gain margin saturates, and single mode behavior is maintained. Measurements are consistent in many respects with the predicted consequences of spatial hole burning
Keywords :
III-V semiconductors; carrier density; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor junction lasers; InGaAsP-InP; InGaAsP-InP DFB lasers; TE-TE gain margin; asymmetric optical field; axially nonuniform carrier density; capped-mesa-buried-heterostructure distributed-feedback; diode lasers; dominant TE Bragg modes; laser optical cavity; lasing gain margin degradation; lasing mode shifts; multimode operation; optical saturation; semiconductors; single mode; spatial hole burning; spontaneous emission; stopband; Charge carrier density; Degradation; Diode lasers; Gain measurement; Laser modes; Optical devices; Optical saturation; Spontaneous emission; Stimulated emission; Tellurium;
Journal_Title :
Quantum Electronics, IEEE Journal of