DocumentCode :
1321213
Title :
Linearization and Field Detectivity in Magnetic Tunnel Junction Sensors Connected in Series Incorporating 16 nm-Thick NiFe Free Layers
Author :
Janeiro, Ricardo J. ; Gameiro, Luís ; Lopes, António ; Cardoso, Susana ; Ferreira, Ricardo ; Paz, Elvira ; Freitas, Paulo P.
Author_Institution :
INESC-MN & IN, Lisbon, Portugal
Volume :
48
Issue :
11
fYear :
2012
Firstpage :
4111
Lastpage :
4114
Abstract :
In this work, arrays of MgO-based magnetic tunnel junction elements (5×20 μm2) connected in series are studied for sensor applications. Linearization is obtained by combining shape anisotropy with a longitudinal hard bias field set by CoCrPt permanent magnets integrated on the sides of the array. We show that this architecture has the drawback of a large footprint in the chip, but is largely compensated by the weak bias voltage dependence and huge electric robustness, when comparing with individual magnetic tunnel junctions.
Keywords :
chromium alloys; cobalt alloys; iron alloys; magnesium compounds; magnetic anisotropy; magnetic sensors; magnetic tunnelling; nickel alloys; permanent magnets; platinum alloys; CoCrPt; MgO; NiFe; field detectivity; free layers; longitudinal hard bias field; magnetic tunnel junction sensors; permanent magnets; sensor applications; shape anisotropy; size 16 nm; weak bias voltage dependence; Junctions; Magnetic sensors; Magnetic tunneling; Noise; Sensitivity; Tunneling magnetoresistance; Detectivity; MTJ series; MgO magnetic tunnel junctions; noise level; sensitivity; tunneling magnetoresistance sensors;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2012.2202887
Filename :
6332762
Link To Document :
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