DocumentCode :
1321377
Title :
Microwave-Induced Metallization Damage and Surface Shorts in Semiconductors
Author :
Amadori, Robert A. ; Simons, Mayrant
Author_Institution :
Naval Weapons Laboratory, Dahlgren, Va. 22448.
Issue :
3
fYear :
1971
Firstpage :
196
Lastpage :
197
Abstract :
Although considerable research on semiconductor failure modes has been done, a search of the literature indicates that very little of this work relates to microwave frequencies. Two types of microwave-induced failure modes have been observed: metallization damage and A1 migration along the Si-SiO2 interface.
Keywords :
Failure analysis; Frequency; Impedance; Laboratories; Manufacturing; Metallization; Physics; Testing; Voltage; Weapons;
fLanguage :
English
Journal_Title :
Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9529
Type :
jour
DOI :
10.1109/TR.1971.5216127
Filename :
5216127
Link To Document :
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