DocumentCode
1321588
Title
Optical bistability in semiconductor periodic structures
Author
He, J. ; Cada, Michael
Author_Institution
Dept. of Electr. Eng., Tech. Univ. of Nova Scotia, Halifax, NS, Canada
Volume
27
Issue
5
fYear
1991
fDate
5/1/1991 12:00:00 AM
Firstpage
1182
Lastpage
1188
Abstract
A theoretical demonstration of optical bistability in periodic layered media, particularly in long-period GaAs/AlAs superlattices is presented. The proposed structure consists of a periodic multilayer system, as opposed to previously demonstrated nonlinear bistable devices which employed Fabry-Perot etalons. The optical resonance effect which is essential for bistable devices is, in this case, induced by a refractive index modulation. The nonlinear active medium is distributed in the whole structure rather than placed between the two mirrors of a Fabry-Perot cavity. It is shown by a complete calculation of wave propagation in the periodic nonlinear medium that a multiple valued feature appears in the structure´s nonlinear reflectivity spectrum. The input/output characteristics of the structure exhibit bistable hysteresis similar to that of a nonlinear Fabry-Perot etalon
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; optical bistability; refractive index; semiconductor superlattices; III-V semiconductors; bistable hysteresis; input/output characteristics; long period GaAs-AlAs superlattices; multiple valued feature; nonlinear active medium; optical bistability; optical resonance effect; periodic layered media; periodic multilayer system; refractive index modulation; semiconductor periodic structures; theoretical demonstration; wave propagation; Fabry-Perot; Gallium arsenide; Nonhomogeneous media; Nonlinear optical devices; Nonlinear optics; Optical bistability; Optical devices; Optical modulation; Periodic structures; Semiconductor superlattices;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.83375
Filename
83375
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