• DocumentCode
    1321588
  • Title

    Optical bistability in semiconductor periodic structures

  • Author

    He, J. ; Cada, Michael

  • Author_Institution
    Dept. of Electr. Eng., Tech. Univ. of Nova Scotia, Halifax, NS, Canada
  • Volume
    27
  • Issue
    5
  • fYear
    1991
  • fDate
    5/1/1991 12:00:00 AM
  • Firstpage
    1182
  • Lastpage
    1188
  • Abstract
    A theoretical demonstration of optical bistability in periodic layered media, particularly in long-period GaAs/AlAs superlattices is presented. The proposed structure consists of a periodic multilayer system, as opposed to previously demonstrated nonlinear bistable devices which employed Fabry-Perot etalons. The optical resonance effect which is essential for bistable devices is, in this case, induced by a refractive index modulation. The nonlinear active medium is distributed in the whole structure rather than placed between the two mirrors of a Fabry-Perot cavity. It is shown by a complete calculation of wave propagation in the periodic nonlinear medium that a multiple valued feature appears in the structure´s nonlinear reflectivity spectrum. The input/output characteristics of the structure exhibit bistable hysteresis similar to that of a nonlinear Fabry-Perot etalon
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; optical bistability; refractive index; semiconductor superlattices; III-V semiconductors; bistable hysteresis; input/output characteristics; long period GaAs-AlAs superlattices; multiple valued feature; nonlinear active medium; optical bistability; optical resonance effect; periodic layered media; periodic multilayer system; refractive index modulation; semiconductor periodic structures; theoretical demonstration; wave propagation; Fabry-Perot; Gallium arsenide; Nonhomogeneous media; Nonlinear optical devices; Nonlinear optics; Optical bistability; Optical devices; Optical modulation; Periodic structures; Semiconductor superlattices;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.83375
  • Filename
    83375