Title :
Large high-speed DRO film memories
Author :
Pohm, A.V. ; Zingg, R.J. ; Smay, T.A. ; Watson, G.A. ; Stewart, R.M.
Author_Institution :
Department of Electrical Engineering, Iowa State University, Ames, Iowa
Abstract :
IN RECENT YEARS there has been a growing interest in the various types of magnetic film memories; a large part of this interest has centered on the high-speed capabilities of destructive read out (DRO) word-organized film memories. Most of the DRO film memories built to date have been of a modest size and have used a field arrangement first proposed by Raffel.1–6 In this arrangement, a word-select transverse field is applied to read out the information and a longitudinal field is applied, along with the transverse word field, in order to write the information back into the memory. Although the memories built so far have been of a modest size, system needs dictate an interest in large high-speed memories.
Keywords :
Delays; Demagnetization; Films; Geometry; Magnetization; Memory management; Transistors;
Journal_Title :
Communication and Electronics, IEEE Transactions on
DOI :
10.1109/TCOME.1964.6592619