Title :
Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions
Author :
Shen, Chih-Chieh ; Hefner, Allen R., Jr. ; Berning, David W. ; Bernstein, Joseph B.
Author_Institution :
Centre for Microelectron. Reliability, Maryland Univ., College Park, MD, USA
Abstract :
The internal failure dynamics of the insulated gate bipolar transistor (IGBT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive reverse-bias safe operation area test system. Simulations are performed with an advanced IGBT circuit simulator model for UIS conditions to predict the mechanisms and conditions for failure. It is shown that the conditions for UIS failure and the shape of the anode voltage avalanche-sustaining waveforms during turn-off vary with the IGBT temperature, and turn-off current level. Evidence of single- and multiple-filament formation is presented and supported with both measurements and simulations
Keywords :
avalanche breakdown; failure analysis; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; semiconductor device measurement; semiconductor device reliability; semiconductor device testing; IGBT failure dynamics; IGBT temperature; anode voltage avalanche-sustaining waveforms; automated nondestructive reverse-bias safe operation area test system; failure conditions prediction; failure mechanisms prediction; insulated gate bipolar transistor; internal failure dynamics; multiple-filament formation; single-filament formation; turn-off; turn-off current level; unclamped inductive loading conditions; unclamped inductive switching; Anodes; Area measurement; Automatic testing; Circuit simulation; Circuit testing; Insulated gate bipolar transistors; Nondestructive testing; Predictive models; Shape; System testing;
Journal_Title :
Industry Applications, IEEE Transactions on
