CW injection seeding of a modelocked semiconductor laser

Author

Joneckis, Lance G. ; Ho, P.-T. ; Burdge, Geoffrey L.

Author_Institution

Lab. for Phys. Sci., College Park, MD, USA

Volume

27

Issue

7

fYear

1991

fDate

7/1/1991 12:00:00 AM

Firstpage

1854

Lastpage

1858

Abstract

The authors extended the injection locking technique to control the output of a modelocked semiconductor laser with an external continuous-wave (CW) signal. With this injection seeding technique, over 8 mW of average power in 30 ps pulses with side cluster suppression of over 20 dB was obtained from an actively modelocked AlGaAs semiconductor laser. This average output power compares favorably with the 12 mW W output power of the extended resonator. The frequency spectrum of the laser is determined by the background noise level as set by the spontaneous emission. Injection seeding overrides the noise and concentrates over 99% of the available energy in a single nearly transform-limited pulse

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; semiconductor junction lasers; superradiance; 12 mW; 8 mW; CW injection seeding; III-V semiconductor; actively modelocked AlGaAs semiconductor laser; average output power; background noise level; extended resonator; external continuous wave signal; frequency spectrum; injection locking technique; injection seeding technique; side cluster suppression; single nearly transform-limited pulse; spontaneous emission; Injection-locked oscillators; Laser mode locking; Laser modes; Laser noise; Optical control; Optical pulses; Power generation; Power lasers; Resonant frequency; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.83386

Filename

83386