DocumentCode :
1321854
Title :
A SiGe Envelope-Tracking Power Amplifier With an Integrated CMOS Envelope Modulator for Mobile WiMAX/3GPP LTE Transmitters
Author :
Li, Yan ; Lopez, Jerry ; Wu, Po-Hsing ; Hu, Weibo ; Wu, Ruili ; Lie, Donald Y C
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Tech Univ., Lubbock, TX, USA
Volume :
59
Issue :
10
fYear :
2011
Firstpage :
2525
Lastpage :
2536
Abstract :
This paper presents a SiGe envelope-tracking (ET) cascode power amplifier (PA) with an integrated CMOS envelope modulator for mobile WiMAX and 3GPP long-term evolution (LTE) transmitters (TXs). The entire ET-based RF PA system delivers the linear output power of 22.3/24.3 dBm with the overall power-added efficiency of 33%/42% at 2.4 GHz for the WiMAX 64 quadrature amplitude modulation (64QAM) and the 3GPP LTE 16 quadrature amplitude modulation, respectively. Additionally, it exhibits a highly efficient broadband characteristic for multiband applications. Compared to the conventional fixed-supply cascode PA, our ET-based cascode PA meets the WiMAX/LTE spectral mask and error vector magnitude spec at close to its P1dB compression without the need of predistortion. The SiGe PA and the CMOS envelope modulator are both designed and fabricated in the TSMC 0.35-μm SiGe BiCMOS process on the same die. This study represents an essential integration step toward achieving a fully monolithic large-signal ET-based TX for wideband wireless applications.
Keywords :
3G mobile communication; BiCMOS integrated circuits; CMOS analogue integrated circuits; Ge-Si alloys; Long Term Evolution; UHF integrated circuits; UHF power amplifiers; WiMax; modulators; quadrature amplitude modulation; radio transmitters; semiconductor materials; ET-based RF PA system; SiGe; TSMC BiCMOS process; efficiency 33 percent; efficiency 42 percent; envelope-tracking cascode power amplifier; error vector magnitude; frequency 2.4 GHz; fully monolithic large-signal ET-based TX; integrated CMOS envelope modulator; mobile WiMAX-3GPP LTE transmitters; quadrature amplitude modulation; size 0.35 mum; spectral mask; Bandwidth; Linearity; Modulation; Silicon germanium; Switches; Transistors; WiMAX; Differential cascode power amplifier (PA); SiGe BiCMOS; WiMAX; envelope tracking (ET); high efficiency; linear-assisted switching envelope modulator; long-term evolution (LTE);
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2011.2164550
Filename :
6020724
Link To Document :
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