DocumentCode :
1321915
Title :
Voltage-Pulse-Induced Switching Dynamics in 
Thin-Film Devices on Silicon
Author :
Seo, Giwan ; Kim, Bong-Jun ; Ko, Changhyun ; Cui, Yanjie ; Lee, Yong Wook ; Shin, Jun-Hwan ; Ramanathan, Shriram ; Kim, Hyun-Tak
Author_Institution :
Sch. of Adv. Device Technol., Univ. of Sci. & Technol., Daejeon, South Korea
Volume :
32
Issue :
11
fYear :
2011
Firstpage :
1582
Lastpage :
1584
Abstract :
We demonstrate the characteristics of voltage-pulse-induced out-of-plane switching driven by metal-insulator transition (MIT jump) with VO2 thin-film devices fabricated on silicon. As the peak of a triangular pulse increases, the delay time from the insulating state to the metallic state linearly decreases and is independent of change in external resistance. The intrinsic rising time is less than 170 ns. An endurance test with continuous voltage pulse shows reliability without breakdown for more than 110 h. This work contributes to correlated oxide electronics utilizing phase transition layers.
Keywords :
elemental semiconductors; metal-insulator transition; semiconductor device reliability; silicon; thin film devices; vanadium compounds; VO2; continuous voltage pulse; delay time; metal-insulator transition; metallic state; oxide electronics; phase transition layers; reliability; thin-film devices; triangular pulse; voltage-pulse-induced out-of-plane switching; voltage-pulse-induced switching dynamics; Delay; Heating; Integrated circuits; Resistance; Silicon; Switches; Voltage measurement; $ hbox{VO}_{2}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2163922
Filename :
6020734
Link To Document :
