DocumentCode
1321922
Title
pH Sensing Characteristics of Extended-Gate Field-Effect Transistor Based on Al-Doped ZnO Nanostructures Hydrothermally Synthesized at Low Temperatures
Author
Yang, Po-Yu ; Wang, Jyh-Liang ; Chiu, Po-Chun ; Chou, Jung-Chuan ; Chen, Cheng-Wei ; Li, Hung-Hsien ; Cheng, Huang-Chung
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
32
Issue
11
fYear
2011
Firstpage
1603
Lastpage
1605
Abstract
The pH sensing properties of an extended-gate field-effect transistor (EGFET) with Al-doped ZnO (AZO) nanostructures are investigated. The AZO nanostructures with different Al dosages were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85°C . The pH sensing characteristics of pH-EGFET sensors with an Al dosage of 1.98 at% can exhibit a higher voltage sensitivity of 57.95 mV/pH, a larger linearity of 0.9998, and a wide sensing range of pH 1-13, attributed to the well-aligned nanowire (NW) array, superior crystallinity, less structural defects, and better conductivity. Consequently, the hydrothermally grown AZO NWs demonstrate superior pH sensing characteristics and reveal the potentials for flexible and disposable biosensors.
Keywords
II-VI semiconductors; aluminium; chemical sensors; crystal defects; electrical conductivity; field effect transistors; nanoelectronics; nanowires; pH measurement; wide band gap semiconductors; zinc compounds; EGFET; ZnO:Al; conductivity; crystallinity; disposable biosensors; doped nanostructures; extended-gate field-effect transistor; flexible biosensors; glass substrate; hydrothermal growth; nanowire array; pH sensing; structural defects; temperature 85 degC; Conductivity; Electrodes; Nanostructures; Sensitivity; Sensors; Substrates; Zinc oxide; Al-doped zinc oxide (AZO); extended-gate field-effect transistor (EGFET); hydrothermal method; low temperature;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2164230
Filename
6020735
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