Robust Hall Effect Magnetic Field Sensors for Operation at High Temperatures and in Harsh Radiation Environments

We describe the fabrication and magnetoelectric properties of robust, high sensitivity Hall effect sensors fabricated using AlGaN/GaN and AlInSb/InAsSb/AlInSb heterostructures with a two-dimensional electron gas at the heterointerface. The sensitivity of AlInSb/InAsSb/AlInSb heterostructure clearly degrades above ~ 150°C. The AlGaN/GaN 2DEG Hall sensors were stable up to at least 400 °C and even after irradiation of 380 keV protons with a fluence of 1×10¹⁴ cm^{- 2}, where AlInSb/InAsSb/AlInSb heterostructure showed an increase in the sheet carrier density. The feasibility of applications of the AlGaN/GaN and AlInSb/InAsSb/AlInSb Hall sensor for harsh radiation environment is discussed.