Resonant cavity-enhanced (RCE) photodetectors

Author

Kishino, Katsumi ; Ünlü, M. Selim ; Chyi, Jen-Inn ; Reed, J. ; Arsenault, L. ; Morkoç, Hadis

Author_Institution

Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA

Volume

27

Issue

8

fYear

1991

fDate

8/1/1991 12:00:00 AM

Firstpage

2025

Lastpage

2034

Abstract

The photosensitivity characteristics of resonant cavity-enhanced (RCE) photodetectors are investigated. The photodetectors were formed by integrating the active absorption region into a resonant cavity composed of top and bottom (buried) mirrors. A general expression for quantum efficiency for RCE photodetectors was derived taking the external losses into account. Drastic enhancement in quantum efficiency is demonstrated at resonant wavelengths for a high quality factor Q cavity with a very thin absorption layer. An improvement by a factor of four in the bandwidth-efficiency product for RCE p-i-n detectors is predicted. Molecular beam epitaxy grown RCE-heterojunction phototransistors (RCE-HPT) were fabricated and measured demonstrating good agreement between experiment and theory

Keywords

integrated optoelectronics; optical resonators; p-i-n diodes; photodetectors; phototransistors; RCE p-i-n detectors; RCE-heterojunction phototransistors; active absorption region; bandwidth-efficiency product; external losses; high quality factor Q cavity; mirrors; molecular beam epitaxy; photodetectors; photosensitivity characteristics; quantum efficiency; resonant cavity-enhanced; resonant wavelengths; thin absorption layer; Absorption; Detectors; Genetic expression; Mirrors; Molecular beam epitaxial growth; PIN photodiodes; Photodetectors; Phototransistors; Q factor; Resonance;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.83412

Filename

83412