Title :
Illuminated ballistic camel diode: a new optoelectronic negative resistance device
fDate :
6/23/1988 12:00:00 AM
Abstract :
An appropriately designed illuminated ballistic camel diode (IBCD) should exhibit a negative resistance range of its current/voltage characteristics by the decrease of temporarily trapped, photoelectrically released minority carriers with increasing applied voltage. Integration with a p-n light-emitting diode in a heterostructure provides a bistable memory element
Keywords :
hole traps; light emitting diodes; minority carriers; negative resistance; optoelectronic devices; photoelectric devices; semiconductor diodes; semiconductor storage; LED; applied voltage; bistable memory element; current/voltage characteristics; heterostructure; illuminated ballistic camel diode; optoelectronic negative resistance device; p-n light-emitting diode; photoelectrically released minority carriers; semiconductor device; temporarily trapped carriers;
Journal_Title :
Electronics Letters
