Title :
A 132.6-GHz Phase-Locked Loop in 65 nm Digital CMOS
Author :
Lin, Bo-Yu ; Liu, Shen-Iuan
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A phase-locked loop (PLL) with the proposed voltage-controlled oscillator (VCO) and a divide-by-2 injection-locked frequency divider (ILFD) is fabricated in 65-nm digital CMOS technology. The proposed VCO and the divide-by-two ILFD operate at the higher and lower poles, respectively, of two fourth-order LC ladders. The frequency ratio between the VCO and its first divide-by-2 ILFD is kept by scaling the inductances and the capacitances. The design considerations of this VCO and the locking range of this ILFD are discussed. The measured locking range of this PLL is 132.1-132.6 GHz. It consumes 120.8 mW from 1.35-V supply, excluding the output buffers. The chip area is 0.96 × 0.92 mm2.
Keywords :
CMOS digital integrated circuits; field effect MIMIC; frequency dividers; millimetre wave oscillators; phase locked loops; voltage-controlled oscillators; PLL; VCO; digital CMOS technology; divide-by-2 ILFD; divide-by-2 injection-locked frequency divider; fourth-order LC ladders; frequency 132.1 GHz to 132.6 GHz; output buffers; phase-locked loop; power 120.8 mW; size 65 nm; voltage 1.32 V; voltage-controlled oscillator; CMOS integrated circuits; Capacitance; Frequency conversion; Inductors; Phase locked loops; Q factor; Voltage-controlled oscillators; Fourth-order LC ladder; injection-locked frequency divider (ILFD); phase-locked loop (PLL); voltage-controlled oscillator (VCO);
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2011.2164156