DocumentCode :
1322127
Title :
Co 
FeSi Based Magnetic Tunnel Junctions With BaO Barrier
Author :
Rogge, J. ; Hedwig, P. ; Sterwerf, C. ; Hutten, A.
Author_Institution :
Thin Films & Phys. of Nanostruct., Bielefeld Univ., Bielefeld, Germany
Volume :
48
Issue :
11
fYear :
2012
Firstpage :
3825
Lastpage :
3828
Abstract :
BaO has been introduced as a novel tunnel barrier material in magnetic tunnel junctions (MTJs). Due to the good agreement regarding lattice constants and crystal structure, we believe BaO to be particularly suitable as barrier in MTJs containing Heusler compound electrodes. Co2FeSi/BaO/Fe MTJs have been fabricated by molecular beam epitaxy (MBE) and investigated in terms of microstructure, transport properties and tunnel magneto resistance (TMR). A TMR amplitude as high as 104% at room temperature (RT) has been achieved for very small bias voltages (VBias) and a strong dependence on VBias could be observed as the TMR ratio decreases with increasing VBias to about 14% at VBias = 10 mV.
Keywords :
barium compounds; cobalt alloys; crystal microstructure; crystal structure; iron alloys; lattice constants; molecular beam epitaxial growth; silicon alloys; tunnelling magnetoresistance; BaO barrier; Co2FeSi-BaO-Fe; Heusler compound electrodes; crystal structure; lattice constants; magnetic tunnel junctions; microstructure; molecular beam epitaxy; temperature 293 K to 298 K; transport properties; tunnel barrier material; tunnel magnetoresistance; voltage 10 mV; Electrical resistance measurement; Electrodes; Iron; Junctions; Magnetic tunneling; Molecular beam epitaxial growth; Tunneling magnetoresistance; Barium oxide; Heusler compound; magnetic films; magnetic tunnel junction (MTJ); molecular beam epitaxy (MBE); thin films; tunneling magnetoresistance;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2012.2197373
Filename :
6332910
Link To Document :
