A Cost-Effective $\hbox {Ni/Nb}_{2}\hbox {O}_{5}\hbox {/} \hbox {Al}_{2}\hbox {O}_{3}\hbox {/}\hbox {Ni}_{2}\hbox {Si}$ Metal–Insulator–Metal Capacitor P

Without requiring noble metal electrodes and expensive dielectric materials, a low-cost Ni/Nb₂O₅/Al₂O₃/ Ni₂Si metal-insulator-metal (MIM) capacitor processed at 300°C has been developed using laser annealing and a nickel fully silicided (Ni-FUSI) amorphous silicon bottom electrode. A high capacitance density of 31 fF/μm², along with low electrode resistivities, was achieved. At 25°C, this MIM capacitor also displays a good leakage current density of 3.3 × 10^-7 A/cm² at 1 V. From X-ray diffraction measurement results, the dielectric constants of Nb₂O₅ have been enhanced by KrF excimer laser annealing with different energy values due to hexagonal or orthorhombic phase formations that increase capacitance densities. Predicted 10-year ΔC/C of 0.8% is achieved at 1-V operation. The time-dependent dielectric breakdown (TDDB) characteristics also meet the 10-year lifetime criteria within the operation voltage range. Both the ΔC/C-V and TDDB characteristics have tradeoff relationships with the capacitance value. The combination of the improved Nb₂O₅ dielectric by laser annealing, an inserted Al₂O₃ layer, a high-work-function Ni top electrode, and the low-resistivity Ni₂Si-FUSI bottom electrode leads to excellent device integrity.