Evaluation of Lateral Power MOSFETs in a Synchronous Buck Converter Using a Mixed-Mode Device and Circuit Simulation

Author

Yang, Boyi ; Yuan, Jiann-shiun ; Shen, Zheng John

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA

Volume

58

Issue

11

fYear

2011

Firstpage

4004

Lastpage

4010

Abstract

This paper presents an evaluation of laterally double-diffused MOS transistors in synchronous dc-dc buck converters using a physical-based mixed device and circuit simulation. It is observed that impact ionization of the low-side transistor can be very high after the dead-time drain overshoot voltage point. In addition, heavy ion irradiation degrades power MOSFET performance and may lead to a potential circuit malfunction due to a significant increase in transient current if heavy ions strike the dc-dc buck converter at a critical time during switching.

Keywords

DC-DC power convertors; circuit simulation; impact ionisation; mixed analogue-digital integrated circuits; power MOSFET; radiation effects; semiconductor device reliability; circuit malfunction; circuit simulation; dead-time drain overshoot voltage point; heavy ion irradiation; impact ionization; lateral power MOSFET evaluation; laterally double-diffused MOS transistor; low-side transistor; mixed-mode device; power MOSFET performance degradation; synchronous dc-dc buck converter; transient current; Impact ionization; Integrated circuit modeling; Logic gates; MOSFETs; Mathematical model; Transient analysis; $R_{DS({rm ON})}$; Body diode loss; buck converter; conduction loss; heavy ion radiation; hot electron; impact ionization; laterally double-diffused MOS (LDMOS); mixed-mode simulation; reliability; switching loss;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2166076

Filename

6020777