DocumentCode :
1322333
Title :
Semiconductor-diode light sources
Author :
Lorenz, M.R. ; Pilkuhn, M.H.
Author_Institution :
International Business Machines Corporation
Volume :
4
Issue :
4
fYear :
1967
fDate :
4/1/1967 12:00:00 AM
Firstpage :
87
Lastpage :
96
Abstract :
Electroluminescence can occur as a result of the application of a direct current at a low voltage to a suitably doped crystal containing a p-n junction. It has become apparent in recent years that in certain materials (such as gallium arsenide) and under certain conditions, the efficiency of conversion of electric energy into light can be remarkably high. Since these semiconductor light sources operate at low voltages and low currents and can be made very small, they appear attractive for use in small optical displays. Because they can be switched very rapidly and have fairly monochromatic emission properties, their applications for data transmission are also promising.
Keywords :
Crystalline materials; Displays; Electroluminescence; Gallium arsenide; Light sources; Low voltage; Optical materials; P-n junctions; Semiconductor materials; Stimulated emission;
fLanguage :
English
Journal_Title :
Spectrum, IEEE
Publisher :
ieee
ISSN :
0018-9235
Type :
jour
DOI :
10.1109/MSPEC.1967.5216310
Filename :
5216310
Link To Document :
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