DocumentCode :
132286
Title :
A GaN transistor based 90W AC/DC adapter with a buck-PFC stage and an isolated Quasi-switched-capacitor DC/DC stage
Author :
Xuan Zhang ; Chengcheng Yao ; Xintong Lu ; Davidson, Ernest ; Sievers, Michael ; Scott, Michael James ; Pu Xu ; Jin Wang
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
fYear :
2014
fDate :
16-20 March 2014
Firstpage :
109
Lastpage :
116
Abstract :
This paper presents a GaN Transistor based 90W ac/dc adapter with a Buck-PFC stage and an isolated Quasi-Switched-Capacitor (QSC) dc/dc stage. In the dc/dc stage, two different QSC converters are proposed. Compared to Flyback and LLC resonant converters, the QSC converters feature: 1) reduced voltage stress on the primary-side switches to 2/3 of the input voltage; 2) reduced voltage stress on the transformer to 1/3 of the input voltage and a lower transformer turns ratio; 3) a wide range for soft-switching operation and high efficiency; 4) a simple control strategy. The operation principles and simulation results are presented. A 90 W, 85 V/19 V, 1 MHz QSC resonant converter is built, using 100 V EPC eGaN FETs for all switches. This prototype achieves: 1) a high power density of 10.5 W/cm3; 2) wide-range soft switching and a peak efficiency of 92.8% at 900 kHz in preliminary test results. A Buck-PFC evaluation module from TI is tested with a GaN HEMT and a SiC Schottky diode. The peak efficiency reached 97.1%, and the experimental results are compared with those from the Si based version.
Keywords :
DC-DC power convertors; III-V semiconductors; Schottky diodes; gallium compounds; high electron mobility transistors; power HEMT; power factor correction; silicon compounds; wide band gap semiconductors; AC-DC adapter; EPC egallium nitride FET; GaN; LLC resonant converters; QSC resonant converter; SiC; TI; buck-PFC evaluation module; buck-PFC stage; control strategy; efficiency 92.8 percent; efficiency 97.1 percent; flyback resonant converters; frequency 1 MHz; frequency 900 kHz; gallium nitride HEMT; gallium nitride transistor; isolated quasiswitched-capacitor DC-DC stage; peak efficiency; power 90 W; power density; primary-side switches; reduced voltage stress; silicon carbide Schottky diode; soft-switching operation; transformer turn ratio; voltage 100 V; voltage 19 V; voltage 85 V; wide-range soft switching; Gallium nitride; Inductance; RLC circuits; Resonant frequency; Stress; Switches; Windings;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
Conference_Location :
Fort Worth, TX
Type :
conf
DOI :
10.1109/APEC.2014.6803296
Filename :
6803296
Link To Document :
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