Title :
Internal self-damping optimization in trench power FETs for high-frequency conversion
Author :
Roig, J. ; Tong, C.-F. ; Bauwens, Filip ; Gillon, Renaud ; Massie, Hal ; Hoggatt, Charles
Author_Institution :
ON Semicond., Oudenaarde, Belgium
Abstract :
The impact of the shield resistance (Rsh) on the waveform ringing and system efficiency is assessed in this work for 30V trench power FETs with shielded-gate (TP-FETs). Two different approaches, named distributed and local Rsh, are extensively investigated by experimental and numerical simulation tools. A layout distributed Rsh emerges as the ultimate solution to maximize the self-damping without penalization on the switching power losses or the product cost. The practical implementation of a TP-FET with distributed Rsh in a 12V-to-1.2V buck converter results in one of the best tradeoffs ever reported between overvoltage (<;3.5V) and peak efficiency (~88%) when operating at 1.3MHz.
Keywords :
damping; power convertors; power field effect transistors; buck converter; frequency 1.3 MHz; high-frequency conversion; internal self-damping optimization; shield resistance; shielded gate; switching power losses; trench power FET; voltage 1.2 V to 12 V; voltage 30 V; waveform ringing; Capacitance; Field effect transistors; Layout; Logic gates; Metals; Resistance; Snubbers;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
Conference_Location :
Fort Worth, TX
DOI :
10.1109/APEC.2014.6803300
