Internal self-damping optimization in trench power FETs for high-frequency conversion

Author

Roig, J. ; Tong, C.-F. ; Bauwens, Filip ; Gillon, Renaud ; Massie, Hal ; Hoggatt, Charles

Author_Institution

ON Semicond., Oudenaarde, Belgium

fYear

2014

fDate

16-20 March 2014

Firstpage

137

Lastpage

142

Abstract

The impact of the shield resistance (Rsh) on the waveform ringing and system efficiency is assessed in this work for 30V trench power FETs with shielded-gate (TP-FETs). Two different approaches, named distributed and local Rsh, are extensively investigated by experimental and numerical simulation tools. A layout distributed Rsh emerges as the ultimate solution to maximize the self-damping without penalization on the switching power losses or the product cost. The practical implementation of a TP-FET with distributed Rsh in a 12V-to-1.2V buck converter results in one of the best tradeoffs ever reported between overvoltage (<;3.5V) and peak efficiency (~88%) when operating at 1.3MHz.

Keywords

damping; power convertors; power field effect transistors; buck converter; frequency 1.3 MHz; high-frequency conversion; internal self-damping optimization; shield resistance; shielded gate; switching power losses; trench power FET; voltage 1.2 V to 12 V; voltage 30 V; waveform ringing; Capacitance; Field effect transistors; Layout; Logic gates; Metals; Resistance; Snubbers;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE

Conference_Location

Fort Worth, TX

Type

conf

DOI

10.1109/APEC.2014.6803300

Filename

6803300