مرکز منطقه ای اطلاع رساني علوم و فناوري - Electrical Characteristics of Ultrathin Atomic Layer Deposited <formula formulatype="inline"> <img src="/images/tex/721.gif" alt="\\hbox {TiO}_{2}"> </formula> and <formula formulatype="inline"> <img src="/images/tex/19962.gif" alt=" \\hbox {Al}

Title :

Electrical Characteristics of Ultrathin Atomic Layer Deposited $\\hbox {TiO}_{2}$ and $\\hbox {Al}_{2}\\hbox</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Lee, Ming-Kwei ; Yen, Chih-Feng ; Yang, Sheng-Hsiung</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>58</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>11</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2011</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>3885</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>3889</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Amorphous TiO<sub>2</sub> film of 5 nm prepared by atomic layer deposition (ALD) on ammonium-sulfide-treated p-type InP shows good interface but slightly higher leakage current mainly from thermionic emission. With a high-bandgap amorphous Al<sub>2</sub>O<sub>3</sub> of 3 nm prepared also by ALD on TiO<sub>2</sub>, the leakage currents are improved to 3.1 × 10<sup>-9</sup> and 3.3 × 10<sup>-7</sup> A/cm<sup>2</sup> at ±2.5 MV/cm. The dielectric constant is about 17.8. The lowest interface state density is around 6.7 × 10<sup>11</sup> cm<sup>-2</sup> eV<sup>-1</sup>.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>III-V semiconductors; MOSFET; alumina; amorphous semiconductors; atomic layer deposition; high-k dielectric thin films; indium compounds; interface states; leakage currents; permittivity; thermionic emission; titanium compounds; (NH<sub>4</sub>)S<sub>x</sub>-InP; Al<sub>2</sub>O<sub>3</sub>-TiO<sub>2</sub>; TiO<sub>2</sub>; dielectric constant; electrical characteristics; high-bandgap amorphous film; interface state density; leakage current; stacked dielectrics; thermionic emission; ultrathin atomic layer deposition; Aluminum oxide; Capacitance; Dielectrics; Educational institutions; Indium phosphide; Leakage current; Thermionic emission; <formula formulatype=$ $(hbox{NH}_{4})_{2}hbox{S}_{x}$; $hbox{Al}_{2}hbox{O}_{3}$; $hbox{TiO}_{2}$; atomic layer deposition (ALD); indium phosphide (InP);