DocumentCode
1323285
Title
4.8 mW singlemode oxide confined top-surface emitting vertical-cavity laser diodes
Author
Jung, C. ; Jäger, R. ; Grabherr, M. ; Schnitzer, P. ; Michalzik, R. ; Weigl, B. ; Müller, S. ; Ebeling, K.J.
Author_Institution
Dept. of Optoelectron., Ulm Univ., Germany
Volume
33
Issue
21
fYear
1997
fDate
10/9/1997 12:00:00 AM
Firstpage
1790
Lastpage
1791
Abstract
The authors have optimised MBE-grown GaAs VCSELs emitting at a wavelength of 840 nm for maximum singlemode output power. Devices of 3.5 μm diameter show a record high singlemode CW output power of 4.8 mW and a butt-coupling efficiency into singlemode fibre of >80%
Keywords
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; optical interconnections; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; surface emitting lasers; 3.5 micron; 4.8 mW; 80 percent; 840 nm; CW output power; GaAs; III-V semiconductors; MBE; VCSELs; butt-coupling efficiency; maximum singlemode output power; singlemode oxide confined laser; top-surface emitting vertical-cavity laser diode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19971207
Filename
633395
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