Title :
4.8 mW singlemode oxide confined top-surface emitting vertical-cavity laser diodes
Author :
Jung, C. ; Jäger, R. ; Grabherr, M. ; Schnitzer, P. ; Michalzik, R. ; Weigl, B. ; Müller, S. ; Ebeling, K.J.
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
fDate :
10/9/1997 12:00:00 AM
Abstract :
The authors have optimised MBE-grown GaAs VCSELs emitting at a wavelength of 840 nm for maximum singlemode output power. Devices of 3.5 μm diameter show a record high singlemode CW output power of 4.8 mW and a butt-coupling efficiency into singlemode fibre of >80%
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; optical interconnections; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; surface emitting lasers; 3.5 micron; 4.8 mW; 80 percent; 840 nm; CW output power; GaAs; III-V semiconductors; MBE; VCSELs; butt-coupling efficiency; maximum singlemode output power; singlemode oxide confined laser; top-surface emitting vertical-cavity laser diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971207
