DocumentCode :
1323309
Title :
High T0(140 K) and low-threshold long-wavelength strained quantum well lasers on InGaAs ternary substrates
Author :
Otsubo, K. ; Shoji, H. ; Kusunoki, T. ; Suzuki, T. ; Uchida, T. ; Nishjima, Y. ; Nakajima, K. ; Ishikawa, H.
Author_Institution :
RWCP Opt. Interconnection Fujitsu Lab., Atsugi, Japan
Volume :
33
Issue :
21
fYear :
1997
fDate :
10/9/1997 12:00:00 AM
Firstpage :
1795
Lastpage :
1797
Abstract :
InGaAs-InAlGaAs strained quantum well lasers emitting in the 1.2 μm region have been fabricated on In0.22Ga0.78As ternary substrates. The threshold current density of the laser with highly reflective facets is 176 A/cm 2 at 20°C. The characteristic temperature (T0) of the device has reached 140 K, which is the highest value ever reported for long-wavelength semiconductor lasers
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser transitions; quantum well lasers; 1.2 micron; 140 K; In0.22Ga0.78As; InGaAs ternary substrates; InGaAs-InAlGaAs; high characteristic temperature; highly reflective facets; long-wavelength laser; low-threshold operation; semiconductor lasers; strained quantum well lasers; threshold current density;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19971238
Filename :
633399
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1323309
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