Title :
A modified two-level three-phase quasi-soft-switching inverter
Author :
Yusheng Liu ; Weimin Wu ; Blaabjerg, Frede ; Chung, Henry Shu-Hung
Author_Institution :
Dept. of Electr. Eng., Shanghai Maritime Univ. Shanghai, Shanghai, China
Abstract :
A traditional Voltage Source Inverter (VSI) has higher efficiency than a Current Voltage Source (CSI) due to the less conduction power loss. However, the reverse recovery of the free-wheeling diode limits the efficiency improvement for the silicon devices based hard-switching VSI. The traditional quasi-soft-switching inverter can alternate between VSI and CSI by using a proper control scheme and thereby reduce the power losses caused by the reverse recovery of the free-wheeling diode. Nevertheless, slightly extra conduction power loss of the auxiliary switch is also introduced. In order to reduce the extra conduction power loss and the voltage stress across the DC-link capacitor, a modified two-level three-phase quasi-soft-switching inverter is proposed by using a SiC MOSFET instead of an IGBT. The principle of the modified two-level three-phase quasi-soft-switching inverter is analyzed in detail. And the performance is verified through simulations and experiments on a 5 kW/380 V three-phase prototype.
Keywords :
elemental semiconductors; invertors; power MOSFET; semiconductor diodes; DC-link capacitor; extra conduction power loss reduction; free-wheeling diode reverse recovery; modified two-level three-phase quasi-soft-switching inverter; power 5 kW; silicon carbide MOSFET; silicon device based hard-switching VSI; voltage 380 V; voltage source inverter; voltage stress reduction; Equivalent circuits; Inductors; Inverters; Power generation; Switches; Zero current switching; Zero voltage switching; CSI; Efficiency; Operation principle; Quasi-Soft-Switching Inverter; Shoot-through; VSI;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
Conference_Location :
Fort Worth, TX
DOI :
10.1109/APEC.2014.6803319
