DocumentCode :
1323408
Title :
A Magnetostatic MEMS Switch Designed for Portable Applications
Author :
Tang, Min ; Liao, Ebin ; Cheng, Cheng Kuo ; Lee, Dayong ; Kumar, Rakesh ; Lee, Yong Hean ; Shankar, Ravi ; Le Néel, Olivier ; Noviello, Giuseppe ; Italia, Francesco
Author_Institution :
Inst. of Microelectron., Agency for Sci., Technol. & Res. (A*STAR), Singapore, Singapore
Volume :
19
Issue :
5
fYear :
2010
Firstpage :
1131
Lastpage :
1139
Abstract :
A passive magnetostatic microelectromechanical systems (MEMS) switch using only one electroplated soft magnetic layer of nickel-iron (Ni80Fe20) alloy was designed, fabricated, and characterized. The switch is composed of an electroplated Ni80Fe20 plate supported by a pair of torsion bars from two sides. The Ni80Fe20 plate is patterned into long and narrow strips to improve the sensitivity. The switch is actuated by bringing an external magnet closer to the switch. Therefore, no internal electrical power is consumed by the device for actuation. The magnetic field required to turn on the switch is 4.8 mT, and the initial contact resistance is 0.5 Ω with gold contacts. The switch has been tested to pass more than 34 million hot-switching cycles at 2-mA current at room temperature when packaged at the wafer level with SU-8 sealing. The die size is 2.1 × 1.94 × 1.1 mm3. The magnetic switch of this paper has the potential to replace the conventional reed switch in portable electronics such as laptops, cellular phones, personal data assistants, pacemakers, and hearing aids.
Keywords :
electroplating; iron alloys; magnetostatic wave devices; microswitches; nickel alloys; nickel compounds; portable instruments; Ni80Fe20; SU-8 sealing; cellular phones; current 2 mA; electrical power; electroplated soft magnetic layer; external magnet; gold contacts; hearing aids; hot switching cycles; initial contact resistance; laptops; magnetostatic MEMS switch design; magnetostatic microelectromechanical systems; pacemakers; personal data assistants; portable electronics; resistance 0.5 ohm; temperature 293 K to 298 K; torsion bars; Magnetostatics; Perpendicular magnetic anisotropy; Saturation magnetization; Soft magnetic materials; Switches; Torque; Magnetic devices; magnetic switching; magnetostatics; microelectromechanical devices; micromachining; microswitches; wafer bonding;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2010.2067434
Filename :
5570862
Link To Document :
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