DocumentCode :
1323422
Title :
Single SiC/Si heterostructure negative-differential-resistance diode for resistive-fuse applications
Author :
Wu, Kuen-Hsien ; Fang, Yean-Kuen ; Ho, Jyh-Jier ; Chen, Tzer-Jing ; Hwang, Jun-Dar
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
33
Issue :
21
fYear :
1997
fDate :
10/9/1997 12:00:00 AM
Firstpage :
1824
Lastpage :
1825
Abstract :
A novel resistive-fuse with near ideal current-voltage characteristics has been successfully implemented by using a single SiC/Si heterostructure negative-differential-resistance (NDR) diode. This novel resistive fuse possesses several advantages. Including its simple structure and fabrication process, very low current levels in off-operation, and the potential for high-temperature operation
Keywords :
electric fuses; elemental semiconductors; negative resistance devices; semiconductor diodes; semiconductor materials; silicon; silicon compounds; NDR diode; SiC-Si; current levels; current-voltage characteristics; heterostructure negative-differential-resistance diode; high-temperature operation; off-operation; resistive-fuse applications;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19971205
Filename :
633419
Link To Document :
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