Title :
Six-parameter DC GaAs FET model for nonlinear circuit simulation
Author :
Cao, J. ; Lin, F. ; Kooi, P.S. ; Leong, M.S.
Author_Institution :
Instiute of Microelectron., Singapore
fDate :
10/9/1997 12:00:00 AM
Abstract :
By emphasising the aspects of simplicity and accuracy for GaAs FET modelling, a six-parameter DC GaAs FET model is developed. Good agreement between simulated and measured data is obtained
Keywords :
semiconductor device models; FET model; GaAs; III-V semiconductors; nonlinear circuit simulation; six-parameter DC model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971237
