Title :
Formation and analysis of shallow arsenic profiles
Author :
Clayton, Steven ; Sedgwick, T. ; Reedy, R. ; Michel, A. ; Scilla, G.
Author_Institution :
Naval Ocean Syst. Center, San Diego, CA
fDate :
7/7/1988 12:00:00 AM
Abstract :
Shallow arsenic implants were activated by furnace and rapid thermal annealing (RTA). Comparisons of junction depths measured by secondary ion mass spectrometry (SIMS) and spreading resistance (SR) showed SIMS values 50-90 nm deeper than SR values, due to ion knock-on during SIMS profiling
Keywords :
annealing; arsenic; elemental semiconductors; ion implantation; semiconductor doping; silicon; 50 to 90 nm; RTA; SIMS; Si:As; furnace annealing; ion knock-on; junction depths; rapid thermal annealing; secondary ion mass spectrometry; semiconductors; shallow implants; spreading resistance;
Journal_Title :
Electronics Letters
