Title :
Tunable optical Doppler frequency detector using semi-insulating GaAs semiconductor-metal field-effect transistors
Author :
Wang, Chm-Chia ; Linke, R.A. ; Trivedi, S.
Author_Institution :
NEC Res. Inst., Princeton, NJ, USA
fDate :
10/9/1997 12:00:00 AM
Abstract :
A tunable optical Doppler frequency detector is demonstrated in semi-insulating GaAs metal-semiconductor field-effect transistors (MESFET) based on moving space charge field effects. The application of the gate bias voltage, which modifies the free carrier density in the conducting channel of the device, modulates both the response time as well as the magnitude of the photocurrent generated by non-stationary optical interference patterns
Keywords :
Doppler measurement; III-V semiconductors; Schottky gate field effect transistors; carrier density; gallium arsenide; optical variables measurement; photodetectors; phototransistors; space-charge-limited conduction; GaAs; conducting channel; free carrier density; gate bias voltage; moving space charge field effects; nonstationary optical interference patterns; photocurrent; response time; semiconductor-metal field-effect transistors; tunable optical Doppler frequency detector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971213
