DocumentCode
1323439
Title
Radiation-induced damage in GaAs particle detectors
Author
Bates, R. ; Via, C. Da ; O´Shea, V. ; Pickford, A. ; Raine, C. ; Smith, K.
Author_Institution
Dept. of Phys. & Astron., Glasgow Univ., UK
Volume
44
Issue
5
fYear
1997
fDate
10/1/1997 12:00:00 AM
Firstpage
1705
Lastpage
1707
Abstract
The motivation for investigating the use of GaAs as a material for detecting particles in experiments for high-energy physics (HEP) arose from its perceived resistance to radiation damage. This is a vital requirement for detector materials that are to be used in experiments at future accelerators where the radiation environments would exclude all but the most radiation resistant of detector types
Keywords
III-V semiconductors; Schottky diodes; gallium arsenide; leakage currents; meson effects; neutron effects; proton effects; semiconductor counters; GaAs; GaAs particle detectors; high-energy physics; radiation-induced damage; Current measurement; Extraterrestrial measurements; Gallium arsenide; Large Hadron Collider; Leakage current; Neutrons; Particle accelerators; Physics; Radiation detectors; Schottky diodes;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.633422
Filename
633422
Link To Document