Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

Author

Tsai, Tsung-Ming ; Chang, Kuan-Chang ; Chang, Ting-Chang ; Syu, Yong-En ; Chuang, Siang-Lan ; Chang, Geng-Wei ; Liu, Guan-Ru ; Chen, Min-Chen ; Huang, Hui-Chun ; Liu, Shih-Kun ; Tai, Ya-Hsiang ; Gan, Der-Shin ; Yang, Ya-Liang ; Young, Tai-Fa ; Tseng, Bae-

Author_Institution

Dept. of Mater. & Optoelectron. Sci., Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan

Volume

33

Issue

12

fYear

2012

Firstpage

1696

Lastpage

1698

Abstract

In this letter, we successfully produced resistive switching behaviors by nickel doped into silicon oxide at room temperature. The nickel element was doped into silicon oxide, which is a useful dielectric material in integrated circuit (IC) industries by cosputtering technology. Based on the proposed method, satisfactory reliability of the resistance switching device can be demonstrated by endurance and retention evaluation. We believe that the silicon oxide doped with nickel at room temperature is a promising method for resistive random access memory nonvolatile memory applications due to its compatibility with the IC processes.

Keywords

dielectric materials; integrated circuits; nickel; random-access storage; silicon compounds; sputter deposition; switching; IC application; IC process; SiO₂:Ni; bipolar resistive RAM characteristics; cosputtering technology; dielectric material; integrated circuit industry; nickel doping; nickel element; reliability; resistance switching device; resistive random access memory nonvolatile memory application; resistive switching property; silicon oxide dielectrics; temperature 293 K to 298 K; Dielectrics; Doping; Nickel; Nonvolatile memory; Resistance; Silicon; Tin; Nonvolatile memory (NVM); nickel; resistive switching; silicon oxide;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2217933

Filename

6334415