DocumentCode :
1323563
Title :
Absorption Characteristics of 
Diodes in the Near-Infrared
Author :
Hunter, Chris J. ; Bastiman, Faebian ; Mohmad, Abdul R. ; Richards, Robert ; Ng, Jo Shien ; Sweeney, Stephen J. ; David, John P R
Author_Institution :
Univ. of Sheffield, Sheffield, UK
Volume :
24
Issue :
23
fYear :
2012
Firstpage :
2191
Lastpage :
2194
Abstract :
The absorption properties of a series of GaAs1-xBix layers with ~ 6% Bi have been systematically investigated by measuring photocurrent spectra in p-i-n diode structures grown by molecular beam epitaxy. The GaAs1-xBix layers varied in thickness from 50 to 350 nm and showed a photoresponse in the near-infrared up to almost 1.3 μm. The absorption coefficients of the layers were obtained from the responsivity data. Below the band gap, the absorption coefficients showed an exponential dependence on the photon energy (Urbach tailing).
Keywords :
III-V semiconductors; absorption coefficients; gallium arsenide; infrared sources; molecular beam epitaxial growth; photodiodes; semiconductor growth; GaAs1-xBix-GaAs; absorption coefficients; molecular beam epitaxy; near-infrared diodes; p-i-n diode structures; photocurrent spectra; photoresponse; responsivity; size 50 nm to 350 nm; Absorption; Bismuth; Gallium arsenide; Light emitting diodes; Molecular beam epitaxial growth; Photonic band gap; Photonics; GaAsBi; molecular beam epitaxy (MBE); p-i-n photodiodes; responsivity;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2012.2225420
Filename :
6334417
Link To Document :
