DocumentCode :
1323655
Title :
Fabrication and Characterization of X-Ray Spectroscopic Imaging Arrays Based on Thick Single-Crystal CdTe Epitaxial Layers
Author :
Niraula, Madan ; Yasuda, Kazuhito ; Namba, Syuhei ; Kondo, Takaki ; Muramatsu, Shinya ; Yamashita, Hayate ; Wajima, Yuto ; Agata, Yasunori
Author_Institution :
Nagoya Inst. of Technol., Nagoya, Japan
Volume :
59
Issue :
12
fYear :
2012
Firstpage :
3450
Lastpage :
3455
Abstract :
We present the design and fabrication details of X-ray spectroscopic imaging arrays using metalorganic-vapor-phase-epitaxy-grown thick single-crystal CdTe layers on an n+-Si substrate. Each pixel in the array consists of a p-CdTe/n-CdTe/n+-Si heterojunction diode structure, which was fabricated by subsequently growing n- and p-CdTe layers on the n+-Si substrate. A mechanical dicing process using a diamond blade was used to make deep cuts on the p-CdTe side to define the pixels in an (8 × 8) array. We further developed a low-temperature conductive-epoxy-based bonding technique to bond the array to the readout electronic circuit via an interface board. Preliminary evaluation shows that the array fabrication technique and the bonding technique work good, and the array is capable of discriminating energies of the incident photon and can be applied for the energy-discriminating imaging purpose.
Keywords :
X-ray imaging; X-ray spectroscopy; bonding processes; cadmium compounds; epitaxial layers; substrates; vapour phase epitaxial growth; X-ray spectroscopic imaging arrays; array fabrication; bonding technique; characterization; deep cuts; diamond blade; energy discriminating imaging purpose; incident photon; interface board; low-temperature conductive-epoxy-based bonding; mechanical dicing process; metalorganic-vapor-phase-epitaxy-grown thick single-crystal CdTe layers; n+-Si substrate; p-CdTe/n-CdTe/n+-Si heterojunction diode structure; readout electronic circuit; thick single-crystal CdTe epitaxial layers; Crystals; Detectors; Imaging; Substrates; Temperature measurement; X-ray imaging; CdTe epitaxy; X-ray; gamma ray detector; pixel patterning; spectroscopic imaging array;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2222413
Filename :
6334440
Link To Document :
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