High-Performance a-IGZO Thin-Film Transistor Using $\hbox {Ta}_{2}\hbox {O}_{5}$ Gate Dielectric

In this letter, we report the fabrication of an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor with a high-k dielectric layer on a glass substrate. The room-temperature-deposited a-IGZO channel with Ta₂O₅ exhibits the following operating characteristics: a threshold voltage of 0.25 V, a drain-source current on/off ratio of 10⁵, a subthreshold gate voltage swing of 0.61 V/decade, and a high field-effect mobility of 61.5 cm²/V·s; these characteristics make it suitable for use as a switching transistor and in low-power applications.