Title :
Nearly Universal
Spectrum of Mobility Fluctuation Noise in a Quantum Wire at Radio and Microwave Frequencies
Author :
Agnihotri, Pratik ; Bandyopadhyay, Supriyo
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Commonwealth Univ., Richmond, VA, USA
Abstract :
We have studied the noise power spectrum associated with mobility fluctuations of hot carriers in a GaAs quantum wire in the frequency range of 20 MHz-50 GHz using ensemble Monte Carlo simulation. This frequency range is outside the regime where a noise peak occurs in quantum wires due to well-known streaming oscillations in the carrier drift velocity. In this frequency range, the noise power spectrum is found to exhibit a nearly universal 1/fα dependence, where f is the frequency. The exponent α remains remarkably constant over a wide range of electric field and temperature, and varies between 1.96 and 1.98 as the driving electric field is varied from 500 V/cm to 10 kV/cm at two different temperatures of 30 and 77 K. The constancy of α and its value of ~ 2 may be related to the nature of electron-phonon interactions in quantum wires.
Keywords :
1/f noise; III-V semiconductors; Monte Carlo methods; carrier mobility; fluctuations; gallium arsenide; semiconductor quantum wires; 1/f2 spectrum; GaAs; Monte Carlo simulation; carrier drift velocity; electron-phonon interactions; hot carriers; mobility fluctuation noise; quantum wire; streaming oscillations; Gallium arsenide; Low-frequency noise; Oscillators; Phonons; Wire; Low-frequency noise; mobility fluctuations; quantum wire; streaming oscillations;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2069565