DocumentCode
1323758
Title
Nearly Universal
Spectrum of Mobility Fluctuation Noise in a Quantum Wire at Radio and Microwave Frequencies
Author
Agnihotri, Pratik ; Bandyopadhyay, Supriyo
Author_Institution
Dept. of Electr. & Comput. Eng., Virginia Commonwealth Univ., Richmond, VA, USA
Volume
57
Issue
11
fYear
2010
Firstpage
3101
Lastpage
3105
Abstract
We have studied the noise power spectrum associated with mobility fluctuations of hot carriers in a GaAs quantum wire in the frequency range of 20 MHz-50 GHz using ensemble Monte Carlo simulation. This frequency range is outside the regime where a noise peak occurs in quantum wires due to well-known streaming oscillations in the carrier drift velocity. In this frequency range, the noise power spectrum is found to exhibit a nearly universal 1/fα dependence, where f is the frequency. The exponent α remains remarkably constant over a wide range of electric field and temperature, and varies between 1.96 and 1.98 as the driving electric field is varied from 500 V/cm to 10 kV/cm at two different temperatures of 30 and 77 K. The constancy of α and its value of ~ 2 may be related to the nature of electron-phonon interactions in quantum wires.
Keywords
1/f noise; III-V semiconductors; Monte Carlo methods; carrier mobility; fluctuations; gallium arsenide; semiconductor quantum wires; 1/f2 spectrum; GaAs; Monte Carlo simulation; carrier drift velocity; electron-phonon interactions; hot carriers; mobility fluctuation noise; quantum wire; streaming oscillations; Gallium arsenide; Low-frequency noise; Oscillators; Phonons; Wire; Low-frequency noise; mobility fluctuations; quantum wire; streaming oscillations;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2010.2069565
Filename
5570934
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