Title :
25 GHz MMIC oscillator fabricated using commercial SiGe-HBT process
Author :
Kuhnert, H. ; Heinrich, W. ; Schwerzel, W. ; Schüppen, A.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
fDate :
2/3/2000 12:00:00 AM
Abstract :
Monolithically integrated 17 and 25 GHz SiGe-HBT oscillators are presented. The monolithic microwave integrated circuits (MMICs) are fabricated using the commercially available TEMIC SiGe process. The oscillators deliver 8 dBm output power at 17 GHz and 1.2 dBm at 25 GHz with phase noise <-90 dBc/Hz at 100 kHz offset, which are record values for MMICs on low-resistivity silicon substrate
Keywords :
Ge-Si alloys; MMIC oscillators; bipolar MMIC; heterojunction bipolar transistors; semiconductor materials; 17 GHz; 25 GHz; SiGe; SiGe HBT MMIC oscillator; TEMIC process; low-resistivity silicon substrate; monolithic integration; output power; phase noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000206
