DocumentCode
1323929
Title
GaAs/AlGaAs quantum well intermixing using buried Al-oxide layer
Author
Kim, K.S. ; Ha, K.H. ; Han, T.Y. ; Yang, M. ; Lee, Y.-H.
Author_Institution
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
Volume
36
Issue
3
fYear
2000
fDate
2/3/2000 12:00:00 AM
Firstpage
246
Lastpage
247
Abstract
Using buried wet-oxidised AlxOj layers to enhance impurity free vacancy diffusion, the intermixing of GaAs/AlGaAs quantum wells has been achieved. A 70 Å thick GaAs quantum well shows a blueshift of 59 meV when the sample is annealed at 950°C for 120s. By cathodoluminescence measurements, it is confirmed that the bandgap transition region is localised laterally within 1 μm of the oxide/nonoxide interface
Keywords
III-V semiconductors; aluminium compounds; annealing; cathodoluminescence; chemical interdiffusion; gallium arsenide; semiconductor quantum wells; vacancies (crystal); 120 s; 70 angstrom; 950 degC; GaAs-AlGaAs; III-V semiconductors; annealing; bandgap transition region; blueshift; buried wet-oxidised layers; cathodoluminescence measurements; impurity free vacancy diffusion; oxide/nonoxide interface; quantum well intermixing;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000238
Filename
836563
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