• DocumentCode
    1323936
  • Title

    p+-BeTe/n+-ZnSe ESAKI tunnelling heterojunctions for II-VI optoelectronic devices

  • Author

    Reuscher, G. ; Landwehr, G. ; Keim, M. ; Lugauer, H.-J. ; Fischer, F. ; Waag, Andreas

  • Author_Institution
    Phys. Inst., Wurzburg Univ., Germany
  • Volume
    36
  • Issue
    3
  • fYear
    2000
  • fDate
    2/3/2000 12:00:00 AM
  • Firstpage
    247
  • Lastpage
    249
  • Abstract
    The realisation of a p+-BeTe/n+-ZnSe ESAKI tunnelling diode is reported. Negative differential resistance was observed under forward bias at room temperature with a peak to valley ratio of 1.55:1. In the backward direction a current density of 400 A/cm 2 was achieved at 3.3 V. These data indicate that p+ -BeTe/n+-ZnSe tunnel diodes are suitable as buried electron to hole converters in II-VI optoelectronic devices
  • Keywords
    II-VI semiconductors; beryllium compounds; heavily doped semiconductors; negative resistance; p-n heterojunctions; photodiodes; tunnel diodes; wide band gap semiconductors; zinc compounds; 3.3 V; BeTe-ZnSe; II-VI heterojunction; buried electron-to-hole converter; current density; negative differential resistance; optoelectronic device; p+-BeTe/n+-ZnSe ESAKI tunnelling diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000230
  • Filename
    836564
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1323936