Title :
3.3 V supply single-voltage-operating double-planar-doped AlGaAs/InGaAs PHEMT with double channel for 1.6 GHz digital mobile communications
Author :
Lee, Jong-Lam ; Kim, Jong Kyu ; Choi, Kyoung Jin ; Yoo, Hyung Mo
Author_Institution :
Pohang Inst. of Sci. & Technol., South Korea
fDate :
2/3/2000 12:00:00 AM
Abstract :
A 3.3 V supply single-voltage AlGaAs/InGaAs PHEMT with double channels has been developed for CDMA handsets for global mobile personal communication systems. The PHEMT has an output power of 24.2 dBm (75.2 mW/mm output power density), 37% power-added efficiency, and a third-order intermodulation distortion level of -30.7 dBc under single-voltage operation with a 3.3 V drain voltage and 1.6 GHz frequency. The power density is the highest among those reported for power devices operating at a single voltage. The good performance is obtained by incorporating an AlGaAs/GaAs quantum well channel between the gate and the InGaAs channel
Keywords :
III-V semiconductors; UHF field effect transistors; aluminium compounds; code division multiple access; digital radio; gallium arsenide; indium compounds; intermodulation distortion; mobile radio; power HEMT; 1.6 GHz; 3.3 V; 37 percent; AlGaAs-GaAs; AlGaAs-InGaAs; AlGaAs/GaAs quantum well channel; AlGaAs/InGaAs PHEMT; CDMA handsets; InGaAs channel; digital mobile communications; double channel; double-planar-doped PHEMT; global mobile personal communication systems; power density; power device; pseudomorphic HEMT; quantum well channel; single-voltage operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000228
