Title :
GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors with zero-offset and low-knee-voltage characteristics
Author :
Mochizuki, K. ; Welty, R.J. ; Asbeck, P.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
fDate :
2/3/2000 12:00:00 AM
Abstract :
Collector-up GaInP/GaAs heterojunction bipolar transistors with a 10 nm-thick GaInP tunnel layer, which prevents the flow of holes at the base-collector junction while allowing the electrons to flow, have been realised which have current-voltage characteristics with almost zero offset (5 to 10 mV) and a very small knee voltage of 0.34 V at 0.5 kA/cm 2. These characteristics make the transistors attractive candidates for high-efficiency high power amplifiers
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power bipolar transistors; tunnel transistors; 0.34 V; 10 nm; GaInP tunnel layer; GaInP-GaAs; GaInP/GaAs HBT; I-V characteristics; base-collector junction; collector-up tunnelling-collector; current-voltage characteristics; heterojunction bipolar transistors; high-efficiency high power amplifiers; low-knee-voltage characteristics; zero-offset;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000211
