Title :
Advantages of GaN in a high-voltage resonant LLC converter
Author :
Seeman, Michael D. ; Bahl, Sandeep R. ; Anderson, David I. ; Shah, Ghalib A.
Author_Institution :
Texas Instrum., Santa Clara, CA, USA
Abstract :
LLC Resonant converters have been popular in recent years by providing highly-efficient, compact isolated power conversion for numerous applications. 48V to 12V and 400V to 12V step-down isolated converters are often required in server, telecom and automotive applications. While the switching losses in LLC converters are eliminated due to zero-voltage switching, the primary-side switch output capacitance limits switching frequency and thus places a lower-bound on the converter size. This switch-node capacitance can be significantly reduced by the use of high-voltage Gallium Nitride (GaN) power transistors. This paper demonstrates a 500W, 380V to 12V LLC converter using GaN transistors which achieves 97.85% efficiency with a 308 W/in3 power density.
Keywords :
III-V semiconductors; LC circuits; gallium compounds; power transistors; resonant power convertors; switching convertors; wide band gap semiconductors; zero voltage switching; GaN; automotive application; compact isolated power conversion; efficiency 97.85 percent; high-voltage resonant LLC converter; power 500 W; power density; power transistor; primary-side switch output capacitance; switch-node capacitance; switching loss; telecom application; voltage 400 V to 12 V; voltage 48 V to 12 V; zero-voltage switching; Capacitance; Field effect transistors; Gallium nitride; Silicon; Switches; Windings;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
Conference_Location :
Fort Worth, TX
DOI :
10.1109/APEC.2014.6803351