Title :
Improved Ni/SiC Schottky diode formation
Author :
Kestle, A. ; Wilks, S.P. ; Dunstan, P.R. ; Pritchard, M. ; Mawby, P.A.
Author_Institution :
Semicond. Interfaces Lab., Univ. of Wales, Swansea, UK
fDate :
2/3/2000 12:00:00 AM
Abstract :
The authors report for the first time the effect of a post deposition anneal on ultra-high vacuum (UHV) and high vacuum (HV) formed Ni/SiC Schottky diodes. The anneal is shown to increase the Schottky barrier height by between 0.17 and 0.3 eV. In addition, the ideality of the diodes is also significantly improved
Keywords :
Schottky diodes; annealing; nickel; silicon compounds; vacuum deposited coatings; wide band gap semiconductors; Ni-SiC; Ni/SiC Schottky diode; Schottky barrier height; annealing; high vacuum deposition; ideality factor; ultra-high vacuum deposition;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000244
