Title :
Low-frequency noise in AlGaN/GaN MOS-HFETs
Author :
Pala, N. ; Gaska, R. ; Rumyantsev, S. ; Shur, M.S. ; Khan, M.Asif ; Hu, X. ; Simin, G. ; Yang, J.
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
2/3/2000 12:00:00 AM
Abstract :
A comparative study is presented of low-frequency noise in GaN-based metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs) and HFETs. The Hooge parameter at zero gate bias was of the order of 10-3 for both type of device. The AlGaN/GaN MOS-HFETs exhibited extremely low gate leakage current and much lower noise at both positive and negative gate biases
Keywords :
MOSFET; AlGaN-GaN; AlGaN/GaN MOS-HFET; Hooge parameter; leakage current; low-frequency noise; metal-oxide-semiconductor heterostructure field effect transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000171
