Advanced SPICE models applied to high power GaN devices and integrated GaN drive circuits

This paper describes the application of SPICE models that have been developed for very high power GaN transistors and their integrated drive circuitry. GaN devices that are expected to be used in automotive applications are required to operate at high temperatures and provide very high current operation. The characteristics of drive circuitry must be simulated along with the very large GaN devices when they are used in realistic high power circuits. The present status of both the cascode and the E-Mode GaN structures are described. The particular drive and simulation issues that are presented by current E-Mode GaN transistors are addressed. Using SPICE models, solutions are shown that potentially allow these devices to be used in wide temperature range, and high electrical noise automotive applications.