DocumentCode
132420
Title
Misconception of thermal spreading angle and misapplication to IGBT power modules
Author
Yang Xu ; Hopkins, Douglas C.
Author_Institution
Dept. of ECE, North Carolina State Univ., Raleigh, NC, USA
fYear
2014
fDate
16-20 March 2014
Firstpage
545
Lastpage
551
Abstract
This paper analyzes the widely used 45 degrees thermal spreading model in IGBT package design and quantifies error in application to both single and multilayered package structures. The results are compared with finite element analysis (FEA). For single-layer heat transfer problem, the spreading angle model with a 45 degrees assumption provides a less than 20% conservative error of thermal resistance for a certain substrate layer thickness range, but is not applicable to multi-layered structures. For two or more layered structures, as commonly found in direct bonded copper (DBC) substrates and used in multiple-chip power modules (MCPMs), the 45 degrees fixed-angle method cannot capture the behavior of the heat transfer problem nor accurately predict the temperature of critical points for design. The method introduces substantial underestimation of junction temperature dependent on layer thickness ratios. An in-depth literature review was conducted and little, if any, concrete basis for the 45 degree assumption was found. Guidelines for using more accurate spreading-angle calculations are provided for the practice engineer.
Keywords
bonding processes; finite element analysis; heat transfer; insulated gate bipolar transistors; power field effect transistors; semiconductor device packaging; thermal resistance; wetting; DBC substrate; FEA; IGBT package design; IGBT power module; MCPM; direct bonded copper substrate; finite element analysis; fixed-angle method; junction temperature dependent; multilayered package structure; multiple-chip power module; single package structure; single-layer heat transfer problem; thermal resistance error; thermal spreading angle model; Copper; Electronic packaging thermal management; Heating; Insulated gate bipolar transistors; Substrates; Thermal resistance; IGBT chip temperature; fixed angle thermal spreading model; power semiconductor package;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
Conference_Location
Fort Worth, TX
Type
conf
DOI
10.1109/APEC.2014.6803362
Filename
6803362
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