Title :
Ge/SiGe Quantum Well p-i-n Structures for Uncooled Infrared Bolometers
Author :
Atar, Fatih Bilge ; Yesilyurt, Alper ; Onbasli, Mehmet Cengiz ; Hanoglu, Oguz ; Okyay, Ali K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
Abstract :
The temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance values as high as -5.8%/K are recorded. This value is considerably higher than that of even commercial bolometer materials in addition to being well above the previous efforts based on CMOS compatible materials.
Keywords :
CMOS integrated circuits; Ge-Si alloys; bolometers; germanium; semiconductor materials; semiconductor quantum wells; CMOS compatible materials; Ge-SiGe; quantum well p-i-n structures; uncooled infrared bolometers; Noise; PIN photodiodes; Quantum well devices; Silicon; Silicon germanium; Temperature measurement; Bolometers; germanium; quantum wells; silicon;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2164390
