DocumentCode
1324228
Title
Ge/SiGe Quantum Well p-i-n Structures for Uncooled Infrared Bolometers
Author
Atar, Fatih Bilge ; Yesilyurt, Alper ; Onbasli, Mehmet Cengiz ; Hanoglu, Oguz ; Okyay, Ali K.
Author_Institution
Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
Volume
32
Issue
11
fYear
2011
Firstpage
1567
Lastpage
1569
Abstract
The temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance values as high as -5.8%/K are recorded. This value is considerably higher than that of even commercial bolometer materials in addition to being well above the previous efforts based on CMOS compatible materials.
Keywords
CMOS integrated circuits; Ge-Si alloys; bolometers; germanium; semiconductor materials; semiconductor quantum wells; CMOS compatible materials; Ge-SiGe; quantum well p-i-n structures; uncooled infrared bolometers; Noise; PIN photodiodes; Quantum well devices; Silicon; Silicon germanium; Temperature measurement; Bolometers; germanium; quantum wells; silicon;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2164390
Filename
6022744
Link To Document