Realization of a SiC module-based indirect matrix converter with minimum parasitic inductances

Indirect matrix converters (IMCs) inherently provide more opportunity for higher power per volume densities than traditional back-to-back converters (BBCs). The use of new wide bandgap power semiconductor devices, like those based on silicon carbide (SiC), for different power converter applications is becoming more prevalent due to advantages realized at the system level when compared to conventional silicon (Si) devices. The small footprint and low switching losses of SiC devices allow for an increase in the power density of the power converter, but packaging them into a single module is a challenge. As power converters with higher volumetric densities are being pursued, an IMC based on SiC semiconductor devices provides a more than viable solution for exceeding current power density limits. The development of a 15kW, 480Vrms IMC based on a single power module realized using SiC 1200V, 50A MOSFETs and 1200V, 20A Schottky barrier diodes (SBDs) to achieve a system level power density of 13 kW/liter is presented in this paper. The power stage is implemented in an interleaved input/output phase leg arrangement to reduce parasitic inductances in the critical dc-bus path. Experimental results are given to demonstrate the functionality of the proposed IMC system.