Title :
Large electroabsorption effect in GaInAs/InP multiple quantum well (MQW) optical modulator grown by OMVPE
Author :
Wood, T.H. ; Carr, E.C. ; Burrus, C.A. ; Miller, B.I. ; Koren, U.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ
fDate :
7/7/1988 12:00:00 AM
Abstract :
To make short, high-speed electroabsorption modulators, it is necessary to use a material and device structure that displays a large change in absorption coefficient, Δα. The authors report a device with Δα=7800 cm-1, which provides an on/off ratio of 44:1 at λ=1.6 μm with a drive voltage of 10 V
Keywords :
III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; optical modulation; semiconductor growth; semiconductor superlattices; vapour phase epitaxial growth; 1.6 micron; 10 V; GaInAs-InP; MQW; OMVPE; device structure; drive voltage; high-speed electroabsorption modulators; large change in absorption coefficient; multiple quantum well; on/off ratio; optical modulator; semiconductors;
Journal_Title :
Electronics Letters
