Title :
1200V cascaded HVIC gate driver for three-level neutral-point-clamped inverter IPM
Author :
In Wha Jeong ; Bum Seok Suh ; Smedley, K.
Author_Institution :
Samsung Electro-Mech., IPM Group, Suwon, South Korea
Abstract :
This paper proposes a new 1200V cascaded high voltage IC (HVIC) gate drive circuit for a three-level NPC inverter intelligent power module (IPM). The proposed single-ground IGBT gate driver of the 1200V three-level NPC inverter is based on a bootstrap capacitor charging method and a cascaded 600V HVIC configuration which can dramatically improve its integration for practical use, especially system air conditioner application. The proposed approach possibly enables high-volume production, low cost, and increased reliability of the 1200V three-phase inverter IPMs. Simulation and experimental results of a 1200V 30A three-level NPC inverter IPM are provided to verify the effectiveness of the proposed 1200V cascaded HVIC gate drive circuit for the 1200V three-level NPC inverter IPM.
Keywords :
bootstrap circuits; capacitors; driver circuits; insulated gate bipolar transistors; invertors; bootstrap capacitor charging method; cascaded HVIC gate driver circuit; current 30 A; high-volume production; single-ground IGBT gate driver; three-level NPC inverter IPM; three-level neutral-point-clamped inverter intelligent power module; voltage 1200 V; voltage 600 V; Capacitors; Insulated gate bipolar transistors; Integrated circuit modeling; Inverters; Logic gates; Pulse width modulation; Switches;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
Conference_Location :
Fort Worth, TX
DOI :
10.1109/APEC.2014.6803372